Physics Division Seminars bring us speakers on a variety of physics related subjects. Usually these are held in the Building 6008 large Conference Room, at 3:00 pm on the chosen day, but times and locations may vary. For more information, contact our seminar chairman,
Tel (Office): (865) 574-6124 (FAX): (865) 574-1268
Recently, cluster ions attract many attentions for the use of their unique irradiation effects to surface analysis, shallow implantation, reactive etching, and surface modifications. Gas cluster ion beams (GCIB) are ionized aggregates of thousands of gaseous atoms or molecules. The low-energy-per-atom characteristics of a GCIB (energy as low as several eV per atom) help to process thin films without causing sub-surface damage. Moreover, reactive GCIBs enhance the chemical reactions without heating the substrates owing to their dense energy deposition. In contrast to atomic or molecular ion beams, when a GCIB bombards a target surface, it induces lateral motion of surface atoms. This lateral motion is referred to as “lateral sputtering,” and it induces surface smoothing. Since GCIB activate surface reactions, chemical reaction enhancements between the target surface and the residual gas are observed. This can be used for high-rate etching of etch-resistant materials. In addition, GCIB sources are widely used for low-damage depth profiling of organic materials in XPS and are used for a primary ion beam of SIMS for organic materials.
Our group has developed GCIB technology for more than 20 years from the beginning. Now, GCIB come into use for various applications including semiconductor processing, surface analysis, and surface modification for bio-medical devices. In this presentation, fundamental characteristics of GCIB will be reported together with wide-range of applications in surface processing. *Co-author: Isao Yamada, University of Hyogo, Japan.
Contact: Alfredo Galindo-Uribarri (865) 574-6124