On-line Ion Sources
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A high efficiency Electron-Beam-Plasma Ion Source ( EBPIS)
is employed for production of positive RIBs which is used in conjunction
with a charge exchange cell to form negative ions for injection into the
tandem accelerator. The ion source design is based on the ISOLDE plasma
source which has been adapted to our system. The operation of this source
is straightforward: several hundred amperes of heating current flows through
a Ta tube which connects the RIB target to the ion source. This tube achieves
nominal operating temperatures of ~1800 C which is needed to transport
the radioactive nuclei to the ion source once they are released from the
target material. Once current passes through the transport tube it is directed
across a high resistance emission surface which operates nominally at 2100
C. Electrons emitted from this surface are then accelerated into a biased
ionization chamber where a plasma is formed and electron impact ionization
takes place. The ion beam is extracted from this plasma across a ~150V
acceleration gap through an opening of a few mm and then accelerated to
platform potential through a set of accelerating apertures. The source
emittance is on the order of 4 p mm mrad at
40kV and the ionization efficiency curves for
stable Xe and Kr are shown here as a function of emission current.
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A direct Negative ion source for radioactive
fluorine and other halogen species has been developed at the HRIBF. The
design is similar to the EBPIS in that a vapor transfer line is also directly
heated to high temperatures by a current of several hundred amperes. This
current also heats a positive Cs surface ionizer with is either a porous
W frit or a spiral of W foil. The positive Cs ions are then accelerated
through a high transmission Mo mesh and strike the surface of a cooler
Ta cone which collects both Cs and nuclear reaction products which have
effused from the target material. The Ta cone is also biasable and held
at a less negative potential than the Cs acceleration grid so that negative
ions formed though the sputter ejection process from the cone will be electrostatically
expelled from the ion source. Shown here is an ionization
efficiency curve for stable F- produced from injected SF6
gas as shown as a function of source heating current.
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A small volume, all permanent magnet, high efficiency electron cyclotron
resonance (ECR) source has also been designed and is under construction
for the generation of positive ion beams. This source should efficiently
dissociate and ionize gaseous molecules such as CO, O2, NO,
etc.
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A 'batch mode' negative ion source for use on the RIB injector has also
been designed, fabricated and is currently being assembled. Multiple
RIB production targets are located on a wheel which is irradiated for a
period of time with the ORIC beam. Nuclear reaction products formed
in collisions between the incident beam and the target material collect
very close to the surface of the target. Once a sufficient number of reaction
products have collected in the target, the wheel is rotated into a
conventional Cs sputter source and negative RIB species are directly produced
for injection into the tandem accelerator. As RIBs are being generated
and transported through the ion optical system, the ORIC beam irradiates
the next target sample and a automated batch process is achieved.
This technique is ideal for long-lived activities such as 56Ni
and 18F.
RIB Injector | Target
| Ion Source | HV Platform
| Charge Exchange Cell | Isobar
Separator | Beam Development
HRIBF
This page was last updated on February 11, 1999
Send questions and comments to Robert
Welton