Measured Yields from HRIBF RIB Production Targets (2001)

Measured Yields from HRIBF RIB Production Targets (2001)
In order to estimate the beam intensity on target, input your energy and choose the submit button in the row.
  • Note added July 14, 2005: Check this table for more recent values.
  • Note added Nov 9, 2004: Check recent newsletters for actual yields on target. Some beams such as Sn, are stronger than by factors as high as 10 or more.
  • Note added Feb. 16, 2001: This uranium carbide target has been proven to withstand 10 uA of proton beam from ORIC.
  • Beam on target prediction includes charge state fraction and a factor to account for transmission losses and inaccuracies in the magnitude of the charge state fraction.
  • Actual charge state selection for an individual experiment depends on many factors. The estimates calculated here are for planning purposes.
  • The range of acceptable tandem voltages is 1-25 MV. Running above 23 MV requires significant conditioning of the tandem and may not always be available. Operation above 24 MV may be possible but at a significant cost in time and stability of the beam is usually not optimum.

Mass Element Half-life Yield from Injector
ions/s/uA of protons
Charge Exchange Efficiency1
(% at 40 kV)
Beam into Tandem2
per uA of protons
Typical ORIC current (uA) Comment Beam energy (MeV) Stripping Submit request
78
Ga 5.09 s 7.28E+05 5.3 3.82E+04 7 EBPIS; isobar contaminated Single
Double
Ge 88 m 1.38E+06 30.8 4.26E+05 7 EBPIS; isobar contaminated Single
Double
79
Ga 2.85 s 4.65E+05 5.3 2.44E+04 7 EBPIS; isobar contaminated Single
Double
Ge 19.0 s 5.01E+05 30.8 1.54E+05 7 EBPIS; isobar contaminated Single
Double
As 9.0 m 7.49E+05 30.7 2.30E+05 7 EBPIS; isobar contaminated Single
Double
80
Ga 1.7 s 4.27E+05 5.3 2.24E+04 7 EBPIS; isobar contaminated Single
Double
As 15.2 s 2.26E+05 30.7 6.93E+04 7 EBPIS; isobar contaminated Single
Double
81
Ge 7.6 s 1.50E+04 30.8 4.62E+03 7 EBPIS; isobar contaminated Single
Double
As 33.3 s 6.52E+04 30.7 2.00E+04 7 EBPIS; isobar contaminated Single
Double
83
Se 22.3 m 9.76E+05 16.6 1.62E+05 7 EBPIS; isobar contaminated Single
Double
Br 2.4 h 2.44E+07 0.8 1.95E+05 7 EBPIS; isobar contaminated Single
Double
Br 2.4 h NA 6.4E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
84
Se 3.1 m 8.09E+04 16.6 1.34E+04 7 EBPIS; isobar contaminated Single
Double
mBr 6.0 m 2.38E+06 0.8 1.90E+04 7 EBPIS; isobar contaminated Single
Double
Br 31.8 m 1.77E+07 0.8 1.42E+05 7 EBPIS; isobar contaminated Single
Double
mBr 6.0 m NA 5.2E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
85
Br 2.9 m 1.79E+07 0.8 1.43E+05 7 EBPIS; isobar contaminated Single
Double
Br 2.9 m NA 3.2E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
86
Br 55.1 s 6.79E+06 0.8 5.44E+04 7 EBPIS; isobar contaminated Single
Double
Br 55.1 s NA 8.5E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
87
Br 55.6 s 7.98E+06 0.8 6.38E+04 7 EBPIS; isobar contaminated Single
Double
Br 55.6 s NA 1.5E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
Kr 1.27 h 5.75E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
88
Br 16.3 s 2.80E+06 0.8 2.24E+04 7 EBPIS; isobar contaminated Single
Double
Br 16.3 s NA 2.3E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
Kr 2.84 h 1.15E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Rb 17.8 m 2.16E+07 0.3 6.49E+04 7 EBPIS; isobar contaminated Single
Double
89
Kr 3.15 m 7.96E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Rb 15.2 m 6.27E+07 0.3 1.88E+05 7 EBPIS; isobar contaminated Single
Double
90
Kr 32.3 s 2.70E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
mRb 4.3 m 3.30E+07 0.3 9.90E+04 7 EBPIS; isobar contaminated Single
Double
91
Kr 8.57 s 1.81E+05 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Rb 58.4 s 3.28E+07 0.3 9.85E+04 7 EBPIS; isobar contaminated Single
Double
Sr 9.63 h 4.94E+07 0.9 4.45E+05 7 EBPIS; isobar contaminated Single
Double
92
Rb 4.49 s 3.19E+06 0.3 9.57E+03 7 EBPIS; isobar contaminated Single
Double
Sr 2.71 h 5.92E+07 0.9 5.33E+05 7 EBPIS; isobar contaminated Single
Double
93
Rb 5.84 s 9.44E+06 0.3 2.83E+04 7 EBPIS; isobar contaminated Single
Double
Sr 7.42 m 2.23E+07 0.9 2.01E+05 7 EBPIS; isobar contaminated Single
Double
94
Rb 2.7 s 7.13E+06 0.3 2.14E+04 7 EBPIS; isobar contaminated Single
Double
Sr 1.26 m 8.32E+06 0.9 7.49E+04 7 EBPIS; isobar contaminated Single
Double
Y 18.7 m 2.94E+05 (1.0) 2.94E+03 7 EBPIS; isobar contaminated Single
Double
95
Sr 23.9 s 4.12E+06 0.9 3.71E+04 7 EBPIS; isobar contaminated Single
Double
112
Ag 3.13 h 3.05E+07 (5.0) 1.53E+06 7 EBPIS; isobar contaminated Single
Double
113
mAg 1.14 m 7.11E+07 (5.0) 3.56E+06 7 EBPIS; isobar contaminated Single
Double
Ag 5.37 h 3.06E+08 (5.0) 1.53E+07 7 EBPIS; isobar contaminated Single
Double
114
Ag 4.6 s 2.71E+07 (5.0) 1.36E+06 7 EBPIS; isobar contaminated Single
Double
115
Ag 20 m 9.97E+07 (5.0) 4.98E+06 7 EBPIS; isobar contaminated Single
Double
116
mAg 8.6 s 8.26E+06 (5.0) 4.13E+05 7 EBPIS; isobar contaminated Single
Double
Ag 2.68 m 3.39E+07 (5.0) 1.69E+06 7 EBPIS; isobar contaminated Single
Double
117
mAg 1.21 m 2.77E+07 (5.0) 1.39E+06 7 EBPIS; isobar contaminated Single
Double
Ag 5.34 s 2.14E+07 (5.0) 1.07E+06 7 EBPIS; isobar contaminated Single
Double
Cd 2.49 h 5.27E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
In 43.2 m 9.48E+06 6.0 5.69E+05 7 EBPIS; isobar contaminated Single
Double
118
mAg 2 s 1.19E+07 (5.0) 5.96E+05 7 EBPIS; isobar contaminated Single
Double
Ag 3.76 s 4.00E+06 (5.0) 2.00E+05 7 EBPIS; isobar contaminated Single
Double
mIn 8.5 s 2.92E+06 6.0 1.75E+05 7 EBPIS; isobar contaminated Single
Double
m'In 4.45 m 8.00E+06 6.0 4.80E+05 7 EBPIS; isobar contaminated Single
Double
119
mCd 2.2 m 2.91E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Cd 2.68 m 2.82E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
In 2.4 m 6.65E+07 6.0 3.99E+06 7 EBPIS; isobar contaminated Single
Double
120
mIn 47.3 s 1.72E+07 6.0 1.03E+06 7 EBPIS; isobar contaminated Single
Double
121
mCd 8.3 s 4.45E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Cd 13.5 s 2.82E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
mIn 3.9 m 3.06E+07 6.0 1.84E+06 7 EBPIS; isobar contaminated Single
Double
In 23.1 s 5.28E+07 6.0 3.17E+06 7 EBPIS; isobar contaminated Single
Double
122
mIn 10.8 s 9.34E+06 6.0 5.60E+05 7 EBPIS; isobar contaminated Single
Double
m'In 10.3 s 2.85E+06 6.0 1.71E+05 7 EBPIS; isobar contaminated Single
Double
123
mIn 47.8 s 6.11E+06 6.0 3.66E+05 7 EBPIS; isobar contaminated Single
Double
In 5.98 s 3.33E+07 6.0 2.00E+06 7 EBPIS; isobar contaminated Single
Double
mSn 40.1 m 6.74E+07 43.4 2.92E+07 7 EBPIS; isobar contaminated Single
Double
124
mIn 3.7 s 7.29E+06 6.0 4.37E+05 7 EBPIS; isobar contaminated Single
Double
In 3.11 s 3.18E+06 6.0 1.91E+05 7 EBPIS; isobar contaminated Single
Double
125
In 2.36 s 1.86E+07 6.0 1.12E+06 7 EBPIS; isobar contaminated Single
Double
mSn 9.52 m 1.51E+07 43.4 6.57E+06 7 EBPIS; isobar contaminated Single
Double
126
In 1.6 s 5.91E+06 6.0 3.55E+05 7 EBPIS; isobar contaminated Single
Double
Sn 1x105 y 3.4E+07 (est) 43.4 4.9E+06 7 EBPIS; isobar-free through SnS molecule Single
Double
mSb 19.2 m 1.09E+07 (31.0) 3.39E+06 7 EBPIS; isobar contaminated Single
Double
127
mIn 3.67 s 4.74E+05 6.0 2.84E+04 7 EBPIS; isobar contaminated Single
Double
In 1.09 s 4.74E+06 6.0 2.85E+05 7 EBPIS; isobar contaminated Single
Double
mSn 4.13 m 3.30E+06 43.4 1.43E+06 7 EBPIS; isobar contaminated Single
Double
mSn 4.13 m 3.30E+06 43.4 3.43E+05 7 EBPIS; isobar-free through SnS molecule Single
Double
Sn 2.1 h 4.31E+07 43.4 1.87E+07 7 EBPIS; isobar contaminated Single
Double
Sn 2.1 h 4.31E+07 43.4 4.00E+06 7 EBPIS; isobar-free through SnS molecule Single
Double
Sb 3.85 d 1.23E+08 (31.0) 3.82E+07 7 EBPIS; isobar contaminated Single
Double
128
mSn 6.5 s 1.66E+06 43.4 7.22E+05 7 EBPIS; isobar contaminated Single
Double
mSn 6.5 s 1.66E+06 43.4 5.14E+04 7 EBPIS; isobar-free through SnS molecule Single
Double
Sn 59.1 m 1.98E+07 43.4 8.61E+06 7 EBPIS; isobar contaminated Single
Double
Sn 59.1 m 1.98E+07 43.4 2.0E+06 7 EBPIS; isobar-free through SnS molecule Single
Double
mSb 10.4 m 1.45E+07 (31.0) 4.50E+06 7 EBPIS; isobar contaminated Single
Double
Sb 9.01 h 7.03E+07 (31.0) 2.18E+07 7 EBPIS; isobar contaminated Single
Double
129
mSn 6.9 m 4.31E+06 43.4 1.87E+06 7 EBPIS; isobar contaminated Single
Double
mSn 6.9 m 4.31E+06 43.4 4.14E+05 7 EBPIS; isobar-free through SnS molecule Single
Double
Sn 2.23 m 2.07E+06 43.4 8.98E+05 7 EBPIS; isobar contaminated Single
Double
Sn 2.23 m 2.07E+06 43.4 1.71E+05 7 EBPIS; isobar-free through SnS molecule Single
Double
Sb 4.4 h 6.59E+07 (31.0) 2.04E+07 7 EBPIS; isobar contaminated Single
Double
Te 1.16 h 1.35E+07 17.0 2.29E+06 7 EBPIS; isobar contaminated Single
Double
130
mSn 1.7 m 4.37E+05 43.4 1.90E+05 7 EBPIS; isobar contaminated Single
Double
mSn 1.7 m 4.37E+05 43.4 2.43E+04 7 EBPIS; isobar-free through SnS molecule Single
Double
Sn 3.72 m 2.69E+06 43.4 1.17E+06 7 EBPIS; isobar contaminated Single
Double
Sn 3.72 m 2.69E+06 43.4 2.29E+05 7 EBPIS; isobar-free through SnS molecule Single
Double
mSb 6.3 m 9.38E+06 (31.0) 2.91E+06 7 EBPIS; isobar contaminated Single
Double
Sb 39.5 m 3.91E+07 (31.0) 1.21E+07 7 EBPIS; isobar contaminated Single
Double
I 12.36 h 4.02E+07 (1.0) 4.02E+05 7 EBPIS; isobar contaminated Single
Double
131
Sn 1.02 m 1.16E+06 43.4 5.05E+05 7 EBPIS; isobar contaminated Single
Double
Sn 1.02 m 1.16E+06 43.4 3.29E+04 7 EBPIS; isobar-free through SnS molecule Single
Double
Sb 23.0 m 3.57E+07 (31.0) 1.11E+07 7 EBPIS; isobar contaminated Single
Double
Te 25 m 1.46E+07 17.0 2.48E+06 7 EBPIS; isobar contaminated Single
Double
132
Sn 39.7 s 9.54E+05 43.4 4.14E+05 7 EBPIS; isobar contaminated Single
Double
Sn 39.7 s 9.54E+05 43.4 3.07E+04 7 EBPIS; isobar-free through SnS molecule Single
Double
mSb 2.78 m 6.94E+06 (31.0) 2.15E+06 7 EBPIS; isobar contaminated Single
Double
Sb 4.1 m 4.29E+06 (31.0) 1.33E+06 7 EBPIS; isobar contaminated Single
Double
Te 3.20 d 1.58E+08 17.0 2.69E+07 7 EBPIS; isobar contaminated Single
Double
mI 1.39 h 4.80E+07 (1.0) 4.80E+05 7 EBPIS; isobar contaminated Single
Double
mI 1.39 h NA 8.2E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
I 2.3 h 3.10E+07 (1.0) 3.10E+05 7 EBPIS; isobar contaminated Single
Double
I 2.3 h NA 7.3E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
133
Sb 2.5 m 4.90E+06 (31.0) 1.52E+06 7 EBPIS; isobar contaminated Single
Double
mTe 55.4 m 8.45E+07 17.0 1.44E+07 7 EBPIS; isobar contaminated Single
Double
Te 12.5 m 1.00E+07 17.0 1.70E+06 7 EBPIS; isobar contaminated Single
Double
mI 9.0 s 4.20E+06 (1.0) 4.20E+04 7 EBPIS; isobar contaminated Single
Double
I 20.8 h 1.66E+08 (1.0) 1.66E+06 7 EBPIS; isobar contaminated Single
Double
134
mSb 10.2 s 1.97E+05 (31.0) 6.12E+04 7 EBPIS; isobar contaminated Single
Double
Te 41.8 m 3.23E+07 17.0 5.50E+06 7 EBPIS; isobar contaminated Single
Double
mI 3.6 m 2.54E+07 (1.0) 2.54E+05 7 EBPIS; isobar contaminated Single
Double
mI 3.6 m NA 1.5E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
I 52.5 m 4.31E+07 (1.0) 4.31E+05 7 EBPIS; isobar contaminated Single
Double
I 52.5 m NA 2.7E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
135
Te 19.0 s 1.58E+06 17.0 2.69E+05 7 EBPIS; isobar contaminated Single
Double
I 6.57 h 7.35E+07 (1.0) 7.35E+05 7 EBPIS; isobar contaminated Single
Double
mXe 15.3 m 1.29E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Xe 9.14 h 1.66E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
136
Te 17.5 s 4.04E+05 17.0 6.88E+04 7 EBPIS; isobar contaminated Single
Double
mI 46.9 s 5.17E+06 (1.0) 5.17E+04 7 EBPIS; isobar contaminated Single
Double
mI 46.9 s NA 1.9E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
I 1.4 m 3.04E+06 (1.0) 3.04E+04 7 EBPIS; isobar contaminated Single
Double
I 1.4 m NA 1.2E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
137
I 24.5 s 6.36E+06 (1.0) 6.36E+04 7 EBPIS; isobar contaminated Single
Double
I 24.5 s NA 2.2E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
Xe 3.82 m 1.56E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
138
I 14.1 m NA 2.3E+04 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
Xe 14.1 m 7.68E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
mCs 2.92 m 3.00E+07 (0.3) 9.00E+04 7 EBPIS; isobar contaminated Single
Double
Cs 33.4 m 2.68E+07 (0.3) 8.04E+04 7 EBPIS; isobar contaminated Single
Double
139
Xe 39.7 s 3.19E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Cs 9.27 m 6.28E+07 (0.3) 1.88E+05 7 EBPIS; isobar contaminated Single
Double
Ba 1.38 h 1.27E+06 (1.0) 1.27E+04 7 EBPIS; isobar contaminated Single
Double
140
Cs 1.06 m 1.62E+07 (0.3) 4.85E+04 7 EBPIS; isobar contaminated Single
Double
141
Cs 24.9 s 2.28E+07 (0.3) 6.85E+04 7 EBPIS; isobar contaminated Single
Double
Ba 18.3 m 1.65E+06 (1.0) 1.65E+04 7 EBPIS; isobar contaminated Single
Double
142
Cs 1.8 s 2.55E+06 (0.3) 7.65E+03 7 EBPIS; isobar contaminated Single
Double
Ba 10.6 m 3.94E+06 (1.0) 3.94E+04 7 EBPIS; isobar contaminated Single
Double
143
Cs 1.78 s 1.60E+06 (0.3) 4.80E+03 7 EBPIS; isobar contaminated Single
Double
La 14.2 m 1.34E+06 (1.0) 1.34E+04 7 EBPIS; isobar contaminated Single
Double
144
La 40.8 s 1.14E+05 (1.0) 1.14E+03 7 EBPIS; isobar contaminated Single
Double
1numbers in parentheses indicate an estimated charge exchange efficiency
2Beam on target estimated to be 10% of that into the tandem for A<100 and 5% for A>100 assuming single stripping in the tandem. Double stripping reduces the beam intensity by a factor of 10 but should permit a more favorable initial charge state to be used.

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This file last modified Monday July 25, 2005