Measured Yields from HRIBF RIB Production Targets (2001)

Measured Yields from HRIBF RIB Production Targets (2001)
In order to estimate the beam intensity on target, input your energy and choose the submit button in the row.
  • Note added July 14, 2005: Check this table for more recent values.
  • Note added Nov 9, 2004: Check recent newsletters for actual yields on target. Some beams such as Sn, are stronger than by factors as high as 10 or more.
  • Note added Feb. 16, 2001: This uranium carbide target has been proven to withstand 10 uA of proton beam from ORIC.
  • Beam on target prediction includes charge state fraction and a factor to account for transmission losses and inaccuracies in the magnitude of the charge state fraction.
  • Actual charge state selection for an individual experiment depends on many factors. The estimates calculated here are for planning purposes.
  • The range of acceptable tandem voltages is 1-25 MV. Running above 23 MV requires significant conditioning of the tandem and may not always be available. Operation above 24 MV may be possible but at a significant cost in time and stability of the beam is usually not optimum.

Mass Element Half-life Yield from Injector
ions/s/uA of protons
Charge Exchange Efficiency1
(% at 40 kV)
Beam into Tandem2
per uA of protons
Typical ORIC current (uA) Comment Beam energy (MeV) Stripping Submit request
78
Ga 5.09 s 7.28E+05 5.3 3.82E+04 7 EBPIS; isobar contaminated Single
Double
Ge 88 m 1.38E+06 30.8 4.26E+05 7 EBPIS; isobar contaminated Single
Double
79
Ga 2.85 s 4.65E+05 5.3 2.44E+04 7 EBPIS; isobar contaminated Single
Double
Ge 19.0 s 5.01E+05 30.8 1.54E+05 7 EBPIS; isobar contaminated Single
Double
As 9.0 m 7.49E+05 30.7 2.30E+05 7 EBPIS; isobar contaminated Single
Double
80
Ga 1.7 s 4.27E+05 5.3 2.24E+04 7 EBPIS; isobar contaminated Single
Double
As 15.2 s 2.26E+05 30.7 6.93E+04 7 EBPIS; isobar contaminated Single
Double
81
Ge 7.6 s 1.50E+04 30.8 4.62E+03 7 EBPIS; isobar contaminated Single
Double
As 33.3 s 6.52E+04 30.7 2.00E+04 7 EBPIS; isobar contaminated Single
Double
83
Se 22.3 m 9.76E+05 16.6 1.62E+05 7 EBPIS; isobar contaminated Single
Double
Br 2.4 h 2.44E+07 0.8 1.95E+05 7 EBPIS; isobar contaminated Single
Double
Br 2.4 h NA 6.4E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
84
Se 3.1 m 8.09E+04 16.6 1.34E+04 7 EBPIS; isobar contaminated Single
Double
mBr 6.0 m 2.38E+06 0.8 1.90E+04 7 EBPIS; isobar contaminated Single
Double
Br 31.8 m 1.77E+07 0.8 1.42E+05 7 EBPIS; isobar contaminated Single
Double
mBr 6.0 m NA 5.2E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
85
Br 2.9 m 1.79E+07 0.8 1.43E+05 7 EBPIS; isobar contaminated Single
Double
Br 2.9 m NA 3.2E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
86
Br 55.1 s 6.79E+06 0.8 5.44E+04 7 EBPIS; isobar contaminated Single
Double
Br 55.1 s NA 8.5E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
87
Br 55.6 s 7.98E+06 0.8 6.38E+04 7 EBPIS; isobar contaminated Single
Double
Br 55.6 s NA 1.5E+06 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
Kr 1.27 h 5.75E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
88
Br 16.3 s 2.80E+06 0.8 2.24E+04 7 EBPIS; isobar contaminated Single
Double
Br 16.3 s NA 2.3E+05 7 LaB6; NO ISOBAR CONTAMINATION Single
Double
Kr 2.84 h 1.15E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Rb 17.8 m 2.16E+07 0.3 6.49E+04 7 EBPIS; isobar contaminated Single
Double
89
Kr 3.15 m 7.96E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Rb 15.2 m 6.27E+07 0.3 1.88E+05 7 EBPIS; isobar contaminated Single
Double
90
Kr 32.3 s 2.70E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
mRb 4.3 m 3.30E+07 0.3 9.90E+04 7 EBPIS; isobar contaminated Single
Double
91
Kr 8.57 s 1.81E+05 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Rb 58.4 s 3.28E+07 0.3 9.85E+04 7 EBPIS; isobar contaminated Single
Double
Sr 9.63 h 4.94E+07 0.9 4.45E+05 7 EBPIS; isobar contaminated Single
Double
92
Rb 4.49 s 3.19E+06 0.3 9.57E+03 7 EBPIS; isobar contaminated Single
Double
Sr 2.71 h 5.92E+07 0.9 5.33E+05 7 EBPIS; isobar contaminated Single
Double
93
Rb 5.84 s 9.44E+06 0.3 2.83E+04 7 EBPIS; isobar contaminated Single
Double
Sr 7.42 m 2.23E+07 0.9 2.01E+05 7 EBPIS; isobar contaminated Single
Double
94
Rb 2.7 s 7.13E+06 0.3 2.14E+04 7 EBPIS; isobar contaminated Single
Double
Sr 1.26 m 8.32E+06 0.9 7.49E+04 7 EBPIS; isobar contaminated Single
Double
Y 18.7 m 2.94E+05 (1.0) 2.94E+03 7 EBPIS; isobar contaminated Single
Double
95
Sr 23.9 s 4.12E+06 0.9 3.71E+04 7 EBPIS; isobar contaminated Single
Double
112
Ag 3.13 h 3.05E+07 (5.0) 1.53E+06 7 EBPIS; isobar contaminated Single
Double
113
mAg 1.14 m 7.11E+07 (5.0) 3.56E+06 7 EBPIS; isobar contaminated Single
Double
Ag 5.37 h 3.06E+08 (5.0) 1.53E+07 7 EBPIS; isobar contaminated Single
Double
114
Ag 4.6 s 2.71E+07 (5.0) 1.36E+06 7 EBPIS; isobar contaminated Single
Double
115
Ag 20 m 9.97E+07 (5.0) 4.98E+06 7 EBPIS; isobar contaminated Single
Double
116
mAg 8.6 s 8.26E+06 (5.0) 4.13E+05 7 EBPIS; isobar contaminated Single
Double
Ag 2.68 m 3.39E+07 (5.0) 1.69E+06 7 EBPIS; isobar contaminated Single
Double
117
mAg 1.21 m 2.77E+07 (5.0) 1.39E+06 7 EBPIS; isobar contaminated Single
Double
Ag 5.34 s 2.14E+07 (5.0) 1.07E+06 7 EBPIS; isobar contaminated Single
Double
Cd 2.49 h 5.27E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
In 43.2 m 9.48E+06 6.0 5.69E+05 7 EBPIS; isobar contaminated Single
Double
118
mAg 2 s 1.19E+07 (5.0) 5.96E+05 7 EBPIS; isobar contaminated Single
Double
Ag 3.76 s 4.00E+06 (5.0) 2.00E+05 7 EBPIS; isobar contaminated Single
Double
mIn 8.5 s 2.92E+06 6.0 1.75E+05 7 EBPIS; isobar contaminated Single
Double
m'In 4.45 m 8.00E+06 6.0 4.80E+05 7 EBPIS; isobar contaminated Single
Double
119
mCd 2.2 m 2.91E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Cd 2.68 m 2.82E+07 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
In 2.4 m 6.65E+07 6.0 3.99E+06 7 EBPIS; isobar contaminated Single
Double
120
mIn 47.3 s 1.72E+07 6.0 1.03E+06 7 EBPIS; isobar contaminated Single
Double
121
mCd 8.3 s 4.45E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
Cd 13.5 s 2.82E+06 0.0 0.00E+00 7 EBPIS; doesn't make negative ions Single
Double
mIn 3.9 m 3.06E+07 6.0 1.84E+06 7 EBPIS; isobar contaminated Single
Double
In 23.1 s 5.28E+07 6.0 3.17E+06 7 EBPIS; isobar contaminated Single
Double
122
mIn 10.8 s 9.34E+06 6.0 5.60E+05 7 EBPIS; isobar contaminated Single
Double
m'In 10.3 s 2.85E+06 6.0 1.71E+05 7 EBPIS; isobar contaminated Single
Double
123
mIn 47.8 s 6.11E+06 6.0 3.66E+05 7 EBPIS; isobar contaminated Single
Double
In 5.98 s 3.33E+07 6.0 2.00E+06 7 EBPIS; isobar contaminated Single
Double
mSn 40.1 m 6.74E+07 43.4 2.92E+07 7 EBPIS; isobar contaminated Single
Double
124
mIn 3.7 s 7.29E+06 6.0 4.37E+05 7 EBPIS; isobar contaminated Single
Double
In 3.11 s 3.18E+06 6.0 1.91E+05 7 EBPIS; isobar contaminated Single
Double
125
In 2.36 s 1.86E+07 6.0 1.12E+06 7 EBPIS; isobar contaminated Single
Double
mSn 9.52 m 1.51E+07 43.4 6.57E+06 7 EBPIS; isobar contaminated Single
Double
126
In 1.6 s 5.91E+06 6.0 3.55E+05 7 EBPIS; isobar contaminated Single
Double
Sn 1x105 y 3.4E+07 (est) 43.4 4.9E+06 7 EBPIS; isobar-free through SnS molecule Single
Double
mSb 19.2 m 1.09E+07 (31.0) 3.39E+06 7 EBPIS; isobar contaminated Single
Double
127
mIn 3.67 s 4.74E+05 6.0 2.84E+04 7 EBPIS; isobar contaminated Single
Double